国家/地区 Germany（5）
关键词 BUFFER LAYER（2） EPITAXIAL GRAPHENE（2） RESISTANCE ANISOTRO.（2）
出版物 PHYSICAL REVIEW B（2）
出版时间 2016（2） 2018（2）
机构 PHYS TECH BUNDESANSTALT（6）
作者 KRUSKOPF M（6）

A morphology study on the epitaxial growth of graphene and its buffer layer

THIN SOLID FILMS

KRUSKOPF M, PIERZ K, PAKDEHI DM, WUNDRACK S, STOSCH R, BAKIN A, SCHUMACHER HW

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

ACS APPLIED MATERIALS INTERFACES

PAKDEHI DM, APROJANZ J, SINTERHAUF A, PIERZ K, KRUSKOPF M, WILLKE P, BARINGHAUS J, STOCKMANN JP, TRAEGER GA, HOHLS F, TEGENKAMP C, WENDEROTH M, AHLERS FJ, SCHUMACHER HW

Magnetocapacitance and dissipation factor of epitaxial graphene-based quantum Hall effect devices

PHYSICAL REVIEW B

SCHURR J, KALMBACH CC, AHLERS FJ, HOHLS F, KRUSKOPF M, MULLER A, PIERZ K, BERGSTEN T, HAUG RJ

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

2D MATERIALS

KRUSKOPF M, PAKDEHI DM, PIERZ K, WUNDRACK S, STOSCH R, DZIOMBA T, GOTZ M, BARINGHAUS J, APROJANZ J, TEGENKAMP C, LIDZBA J, SEYLLER T, HOHLS F, AHLERS FJ, SCHUMACHER HW

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

PHYSICAL REVIEW B

KALMBACH CC, AHLERS FJ, SCHURR J, MULLER A, FEILHAUER J, KRUSKOPF M, PIERZ K, HOHLS F, HAUG RJ

Epitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment

JOURNAL OF PHYSICSCONDENSED MATTER

KRUSKOPF M, PIERZ K, WUNDRACK S, STOSCH R, DZIOMBA T, KALMBACH CC, MULLER A, BARINGHAUS J, TEGENKAMP C, AHLERS FJ, SCHUMACHER HW