国家/地区
关键词
出版物
出版时间 2012（2）
机构
作者 KUB FJ（2）

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

IEEE ELECTRON DEVICE LETTERS

ANDERSON TJ, HOBART KD, NYAKITI LO, WHEELER VD, MYERSWARD RL, CALDWELL JD, BEZARES FJ, JERNIGAN GG, TADJER MJ, IMHOFF EA, KOEHLER AD, GASKILL DK, EDDY CR, KUB FJ

Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

APPLIED PHYSICS LETTERS

TADJER MJ, ANDERSON TJ, HOBART KD, NYAKITI LO, WHEELER VD, MYERSWARD RL, GASKILL DK, EDDY CR, KUB FJ, CALLE F