国家/地区 Korea（3）
关键词 ATOMIC LAYER DEPOSI.（2） CAPACITANCE EQUIVAL.（2） GRAPHENE（2）
出版物
出版时间 2016（3）
机构 SAMSUNG ADV INST TECHNOL（3）
作者 LEE Y（3）

Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

2D MATERIALS

JEONG SJ, KIM HW, HEO J, LEE MH, SONG HJ, KU J, LEE Y, CHO Y, JEON W, SUH H, HWANG S, PARK S

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors

ACS Nano

LEE Y, JEON W, CHO Y, LEE MH, JEONG SJ, PARK J, PARK S

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

SCIENTIFIC REPORTS

JEONG SJ, GU Y, HEO J, YANG J, LEE CS, LEE MH, LEE Y, KIM H, PARK S, HWANG S