国家/地区 Japan（2）
关键词
出版物
出版时间 2013（3）
机构
作者 LI SL（3）

Realization of graphene field-effect transistor with high-kappa HCa2Nb3O10 nanoflake as top-gate dielectric

APPLIED PHYSICS LETTERS

LI WW, LI SL, KOMATSU K, APARECIDOFERREIRA A, LIN YF, XU Y, OSADA M, SASAKI T, TSUKAGOSHI K

Conduction Tuning of Graphene Based on Defect-Induced Localization

ACS NANO

NAKAHARAI S, IIJIMA T, OGAWA S, SUZUKI S, LI SL, TSUKAGOSHI K, SATO S, YOKOYAMA N

Band gap engineering of graphene/h-BN hybrid superlattices nanoribbons

JOURNAL OF APPLIED PHYSICS

LI SL, REN ZY, ZHENG JM, ZHOU YX, WAN Y, HAO L