国家/地区 China（6）
关键词 GRAPHENE（3） SOLGEL METHOD（3） ELECTRICAL PROPERTI.（2）
IVT（2） SCHOTTKY COTACT（2） ZNO FILM（2）
出版物 JOURNAL OF MATERIAL.（2）
出版时间 2019（3） 2018（2）
机构 SHAANXI UNIV TECHNOL（6）
作者 LI YF（6）

Analysis of the carrier transport mechanism and barrier height formation of graphene/Zr-ZnO Schottky contact by I-V-T

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

LI YP, LI YF, ZHANG JH

Analysis on the temperature dependent electrical properties of graphene/Al-ZnO Schottky contact

CURRENT APPLIED PHYSICS

LI YP, LI YF, ZHANG JH, ZOU XY, WANG YS

Carrier Transport Mechanism and Barrier Height of B-, Al- and B-Al-Ion-Doped ZnO Film/Graphene Schottky Contacts Prepared Using the Sol-Gel Method

JOURNAL OF ELECTRONIC MATERIALS

LI YP, MA K, LI YF, XIA PJ, WANG H, ZOU XY, LIU Y, ZHANG Q

Analysis of electrical properties of graphene-ZnO/n-Si(111) Schottky contact

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

LI YP, LI YF, ZHANG JH, ZOU XY, MENG FY, WU R

The effect of annealing on electrical properties of graphene/ZnO schottky contact

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

LI YP, LI YF, ZHANG H, TANG L, ZHANG Q

Influence of B doping on the carrier transport mechanism and barrier height of graphene/ZnO Schottky contact

JOURNAL OF PHYSICS DAPPLIED PHYSICS

LI YP, LI YF, ZHANG JH, TONG T, YE W