国家/地区 Korea（2）
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机构 SUNGKYUNKWAN UNIV（2）
作者 LIU X（2）

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

APPLIED PHYSICS LETTERS

LEE SH, CHOI MS, LEE J, RA CH, LIU X, HWANG E, CHOI JH, ZHONG JQ, CHEN W, YOO WJ

Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrode

NANOSCALE

QU D, LIU X, AHMED F, LEE D, YOO WJ