国家/地区 China（9）
关键词 SCHOTTKY BARRIER HE.（5） GRAPHENE（3） DENSITY FUNCTION TH.（2）
EXTERNAL ELECTRIC F.（2） FIRST PRINCIPLE（2） VERTICAL STRAIN（2）
出版物 NANOMATERIALS（2）
出版时间 2021（3） 2020（2）
机构 GUIZHOU UNIV.（3） TIANJIN POLY.（2）
作者 LUO ZJ（10）

The external electric-field-induced Schottky-to-ohmic contact transition in graphene/As2S3 interface: A study by the first principles

INTERNATIONAL JOURNAL OF ENERGY RESEARCH

LIU XF, ZHANG ZC, LV B, DING Z, LUO ZJ

Van der Waals heterostructure of graphene and As2S3: Tuning the Schottky barrier height by vertical strain

JOURNAL OF CRYSTAL GROWTH

LIU XF, LV B, DING Z, LUO ZJ

The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles

NANOMATERIALS

LIU XF, ZHANG ZC, LV B, DING Z, LUO ZJ

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

NANOMATERIALS

LIU XF, ZHANG ZF, LUO ZJ, LV B, DING Z

A timesaving, low-cost, high-yield method for the synthesis of ultrasmall uniform graphene oxide nanosheets and their application in surfactants

NANOTECHNOLOGY

LUO ZJ, GENG HZ, ZHANG X, DU BT, DING EX, WANG J, LU ZG, SUN BQ, WANG J, LIU JC

Preparation, characterization, and chemical-induced hydrophobicity of thermostable amine-modified graphene oxide

RSC ADVANCES

WANG J, GENG HZ, LUO ZJ, ZHANG ST, ZHANG JQ, LIU JC, YANG HJ, MA SJ, SUN BQ, WANG Y, DA SX, FU YQ

Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures

FRONTIERS IN CHEMISTRY

XIAO WJ, LIU TY, ZHANG YF, ZHONG Z, ZHANG XW, LUO ZJ, LV B, ZHOU X, ZHANG ZC, LIU XF

Tunable properties of ZnSe/graphene heterostructure as a promising candidate for photo/electro-catalyst applications

APPLIED SURFACE SCIENCE

ZHANG YF, WEI JM, LIU TY, ZHONG Z, LUO ZJ, XIAO WJ, LV B, ZHOU X, LIU XF

High-value utilization of mask and heavy fraction of bio-oil: From hazardous waste to biochar, bio-oil, and graphene films

JOURNAL OF HAZARDOUS MATERIALS

LUO ZJ, ZHU XF, DENG JJ, GONG K, ZHU XF

Impact of the vertical strain on the Schottky barrier height for graphene/AlN heterojunction: a study by the first-principles method

EUROPEAN PHYSICAL JOURNAL B

LIU XF, ZHANG ZC, LV B, DING Z, LUO ZJ