国家/地区 China（3）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间 2013（3）
机构 TSINGHUA UNI.（3）
作者 LV HM（3）

High carrier mobility in suspended-channel graphene field effect transistors

APPLIED PHYSICS LETTERS

LV HM, WU HQ, LIU JB, YU JH, NIU JB, LI JF, XU QX, WU XM, QIAN H

Graphene mobility enhancement by organosilane interface engineering

APPLIED PHYSICS LETTERS

LV HM, WU HQ, XIAO K, ZHU WN, XU HL, ZHANG ZY, QIAN H

The study of the effects of cooling conditions on high quality graphene growth by the APCVD method

NANOSCALE

XIAO K, WU HQ, LV HM, WU XM, QIAN H