国家/地区 China（3）
关键词
出版物 APPLIED PHYSICS LETTERS（3）
出版时间
机构 XI AN JIAO T.（3）
作者 MA DY（3）

Enhanced n-doping of epitaxial graphene on SiC by bismuth

APPLIED PHYSICS LETTERS

HU TW, FANG QL, ZHANG XH, LIU XT, MA DY, WEI R, XU KW, MA F

Evidence of atomically resolved 6x6 buffer layer with long-range order and short-range disorder during formation of graphene on 6H-SiC by thermal decomposition

APPLIED PHYSICS LETTERS

HU TW, MA F, MA DY, YANG D, LIU XT, XU KW, CHU PK

Preferred armchair edges of epitaxial graphene on 6H-SiC(0001) by thermal decomposition

APPLIED PHYSICS LETTERS

HU TW, MA DY, MA F, XU KW