国家/地区 China（3）
关键词 GRAPHENE（3）
出版物
出版时间 2016（2）
机构 CHINESE ACAD.（2）
作者 MAO DC（3）

Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

ACS APPLIED MATERIALS INTERFACES

PENG SG, JIN Z, ZHANG DY, SHI JY, MAO DC, WANG SQ, YU GH

Towards a cleaner graphene surface in graphene field effect transistor via N,N-Dimethylacetamide

MATERIALS RESEARCH EXPRESS

MAO DC, PENG SA, WANG SQ, ZHANG DY, SHI JY, WANG XN, JIN Z

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

CHINESE PHYSICS B

MAO DC, JIN Z, WANG SQ, ZHANG DY, SHI JY, PENG SA, WANG XY