国家/地区 China（5）
关键词 GRAPHENE（2）
出版物
出版时间 2016（3）
机构 CHINESE ACAD SCI（5）
作者 MAO DC（5）

Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

ACS APPLIED MATERIALS INTERFACES

PENG SG, JIN Z, ZHANG DY, SHI JY, MAO DC, WANG SQ, YU GH

The two timescales in the charge trapping mechanism for the hysteresis behavior in graphene field effect transistors

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

MAO DC, WANG SQ, PENG SA, ZHANG DY, SHI JY, HUANG XN, ASIF M, JIN Z

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

CHINESE PHYSICS B

MAO DC, JIN Z, WANG SQ, ZHANG DY, SHI JY, PENG SA, WANG XY

Characterization of the quality of metal-graphene contact with contact end resistance measurement

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

WANG SQ, MAO DC, MUHAMMAD A, PENG SG, ZHANG DY, SHI JY, JIN Z

A more reliable measurement method for metal/graphene contact resistance

NANOTECHNOLOGY

WANG SQ, MAO DC, JIN Z, PENG SG, ZHANG DY, SHI JY, WANG XY