国家/地区 Italy（15） England（2）
关键词 GRAPHENE（4） GRAPHENE RIBBON（3） BORON DOPING（2）
DIRAC EQUATION（2） MAGNETIC FIELD（2） MOBILITY GAP（2）
出版物 PHYSICAL REVIEW B（4） JOURNAL OF APPLIED .（2） NANOMATERIALS（2）
出版时间 2015（4） 2011（2） 2012（2） 2020（2）
机构 UNIV PISA（12） UNIV CAMBRID.（2）
作者 MARCONCINI P（19）

Effects of A Magnetic Field on the Transport and Noise Properties of a Graphene Ribbon with Antidots

NANOMATERIALS

MARCONCINI P, MACUCCI M

Theoretical Comparison between the Flicker Noise Behavior of Graphene and of Ordinary Semiconductors

JOURNAL OF SENSORS

MACUCCI M, MARCONCINI P

Geometry-dependent conductance and noise behavior of a graphene ribbon with a series of randomly spaced potential barriers

JOURNAL OF APPLIED PHYSICS

MARCONCINI P, MACUCCI M

Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

MATERIALS

MARCONCINI P, CRESTI A, ROCHE S

High-performance solution of the transport problem in a graphene armchair structure with a generic potential

PHYSICAL REVIEW E

LOGOTETA D, MARCONCINI P, BONATI C, FAGOTTI M, MACUCCI M

Symmetry-dependent transport behavior of graphene double dots

JOURNAL OF APPLIED PHYSICS

MARCONCINI P, MACUCCI M

Unraveling Quantum Hall Breakdown in Bilayer Graphene with Scanning Gate Microscopy

NANO LETTERS

CONNOLLY MR, PUDDY RK, LOGOTETA D, MARCONCINI P, ROY M, GRIFFITHS JP, JONES GAC, MAKSYM PA, MACUCCI M, SMITH CG

Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics

ACS NANO

MARCONCINI P, CRESTI A, TRIOZON F, FIORI G, BIEL B, NIQUET YM, MACUCCI M, ROCHE S

Armchair graphene nanoribbons: PT-symmetry breaking and exceptional points without dissipation

PHYSICAL REVIEW B

FAGOTTI M, BONATI C, LOGOTETA D, MARCONCINI P, MACUCCI M

The k center dot p method and its application to graphene, carbon nanotubes and graphene nanoribbons: the Dirac equation

RIVISTA DEL NUOVO CIMENTO

MARCONCINI P, MACUCCI M