国家/地区 Usa（2）
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机构 USN（2）
作者 MASTRO MA（2）

Epitaxial Growth of III-Nitride/Graphene Heterostructures for Electronic Devices

APPLIED PHYSICS EXPRESS

NEPAL N, WHEELER VD, ANDERSON TJ, KUB FJ, MASTRO MA, MYERSWARD RL, QADRI SB, FREITAS JA, HERNANDEZ SC, NYAKITI LO, WALTON SG, GASKILL K, EDDY CR

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

ACS NANO

CALDWELL JD, ANDERSON TJ, CULBERTSON JC, JERNIGAN GG, HOBART KD, KUB FJ, TADJER MJ, TEDESCO JL, HITE JK, MASTRO MA, MYERSWARD RL, EDDY CR, CAMPBELL PM, GASKILL DK