国家/地区 Spain（7）
关键词 GRAPHENE（2） NANOSTRUCTURED MATE.（2）
出版物 APPLIED PHYSICS LET.（3）
出版时间 2008（2） 2009（2） 2010（2） 2014（2）
机构 CSIC（5）
作者 MESTRES N（8）

Fabrication of highly regular suspended graphene nanoribbons through a one-step electron beam lithography process

MICROELECTRONIC ENGINEERING

LOPEZSUAREZ M, TORRES F, MESTRES N, RURALI R, ABADAL G

Focused ion beam as a tool for graphene technology: Structural study of processing sequence by electron microscopy

JAPANESE JOURNAL OF APPLIED PHYSICS

RIUS G, TAVABI AH, MESTRES N, ERYU O, TANJI T, YOSHIMURA M

Current status of self-organized epitaxial graphene ribbons on the C face of 6H-SiC substrates

JOURNAL OF PHYSICS DAPPLIED PHYSICS

CAMARA N, TIBERJ A, JOUAULT B, CABONI A, JABAKHANJI B, MESTRES N, GODIGNON P, CAMASSEL J

Growth of monolayer graphene on 8 degrees off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

APPLIED PHYSICS LETTERS

CAMARA N, JOUAULT B, CABONI A, JABAKHANJI B, DESRAT W, PAUSAS E, CONSEJO C, MESTRES N, GODIGNON P, CAMASSEL J

Nanostructuring of epitaxial graphene layers on SiC by means of field-induced atomic force microscopy modification

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

RIUS G, CAMARA N, GODIGNON P, PEREZMURANO F, MESTRES N

Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC

PHYSICAL REVIEW B

CAMARA N, HUNTZINGER JR, RIUS G, TIBERJ A, MESTRES N, PEREZMURANO F, GODIGNON P, CAMASSEL J

Early stage formation of graphene on the C face of 6H-SiC

APPLIED PHYSICS LETTERS

CAMARA N, RIUS G, HUNTZINGER JR, TIBERJ A, MAGAUD L, MESTRES N, GODIGNON P, CAMASSEL J

Selective epitaxial growth of graphene on SiC

APPLIED PHYSICS LETTERS

CAMARA N, RIUS G, HUNTZINGER JR, TIBERJ A, MESTRES N, GODIGNON P, CAMASSEL J