国家/地区 Usa（14）
关键词
出版物 APPLIED PHYSICS LET.（4） CARBON（3）
出版时间 2012（3） 2010（2） 2011（2） 2013（2） 2015（2）
机构 USAF（8）
作者 MITCHEL WC（14）

Prospects of direct growth boron nitride films as substrates for graphene electronics

JOURNAL OF MATERIALS RESEARCH

BRESNEHAN MS, HOLLANDER MJ, WETHERINGTON M, WANG K, MIYAGI T, PASTIR G, SNYDER DW, GENGLER JJ, VOEVODIN AA, MITCHEL WC, ROBINSON JA

Abnormal hopping conduction in semiconducting polycrystalline graphene

PHYSICAL REVIEW B

PARK J, MITCHEL WC, ELHAMRI S, GRAZULIS L, ALTFEDER I

Scaling law for energy bandgap and effective electron mass in graphene nano mesh

APPLIED PHYSICS LETTERS

LEE J, ROY AK, WOHLWEND JL, VARSHNEY V, FERGUSON JB, MITCHEL WC, FARMER BL

Interface Oxidative Structural Transitions in Graphene Growth on SiC (0001)

JOURNAL OF PHYSICAL CHEMISTRY C

LU WJ, BARBOSA R, CLARKE E, EYINK K, GRAZULIS L, MITCHEL WC, BOECKL JJ

Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy (vol 100, 133107, 2012)

APPLIED PHYSICS LETTERS

PARK J, MITCHEL WC, ELHAMRI S, BACK TC

Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy grown

APPLIED PHYSICS LETTERS

PARK J, MITCHEL WC, ELHAMRI S, BACK TC

Band gap formation in graphene by in-situ doping

APPLIED PHYSICS LETTERS

PARK J, MITCHEL WC, BROWN GJ, ELHAMRI S, GRAZULIS L, SMITH HE, PACLEY SD, BOECKL JJ, EYINK KG, MOU S, TOMICH DH, HOELSCHER JE

Role of extended defected SIC interface layer on the growth of epitaxial graphene on SiC

CARBON

PARK JH, MITCHEL WC, GRAZULIS L, EYINK K, SMITH HE, HOELSCHER JE

Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)

ADVANCED MATERIALS

PARK J, MITCHEL WC, GRAZULIS L, SMITH HE, EYINK KG, BOECKL JJ, TOMICH DH, PACLEY SD, HOELSCHER JE

Studies of interfacial layers between 4H-SiC (0001) and graphene

CARBON

PARK JH, MITCHEL WC, SMITH HE, GRAZULIS L, EYINK KG