国家/地区 Japan（12）
关键词 GRAPHENE（3） CONTACT RESISTANCE（2） FET（2）
SILICON（2）
出版物 JAPANESE JOURNAL OF.（4） PHYSICAL REVIEW B（4） SOLIDSTATE ELECTRON.（2）
出版时间 2010（7） 2011（2）
机构 TOHOKU UNIV（6） NEC CORP LTD（5）
作者 MIYAMOTO Y（12）

Simulations for the formation dynamics and electronic states of carbon nano materials: Diffusion and alignment of oxygen atoms on graphene

CURRENT APPLIED PHYSICS

KAWAI T, MIYAMOTO Y

Mechanically-induced transport switching effect in graphene-based nanojunctions

PHYSICAL REVIEW B

KAWAI T, POETSCHKE M, MIYAMOTO Y, ROCHA CG, ROCHE S, CUNIBERTI G

Epitaxial graphene top-gate FETs on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T

Epitaxial graphene field-effect transistors on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, SUEMITSU M, OTSUJI T

Photoexfoliation of Graphene from Graphite: An Ab Initio Study

PHYSICAL REVIEW LETTERS

MIYAMOTO Y, ZHANG H, TOMANEK D

Epitaxial Growth Processes of Graphene on Silicon Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

FUKIDOME H, MIYAMOTO Y, HANDA H, SAITO E, SUEMITSU M

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates (vol 49, 04DF17, 2010)

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T

Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

JAPANESE JOURNAL OF APPLIED PHYSICS

OLACVAW R, KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T

Self-redirection of tearing edges in graphene: Tight-binding molecular dynamics simulations

PHYSICAL REVIEW B

KAWAI T, OKADA S, MIYAMOTO Y, HIURA H