国家/地区 Spain（2）
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作者 MYERSWARD RL（2）

Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer-SiC(0001) Interface

CHEMISTRY OF MATERIALS

KOTSAKIDIS JC, GRUBISICCABO A, YIN YF, TADICH A, MYERSWARD RL, DEJARLD M, PAVUNNY SP, CURRIE M, DANIELS KM, LIU C, EDMONDS MT, MEDHEKAR NV, GASKILL DK, DE PARGA ALV, FUHRER MS

Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

APPLIED PHYSICS LETTERS

TADJER MJ, ANDERSON TJ, HOBART KD, NYAKITI LO, WHEELER VD, MYERSWARD RL, GASKILL DK, EDDY CR, KUB FJ, CALLE F