国家/地区 Usa（3）
关键词
出版物 JOURNAL OF VACUUM SCIENCE TECHNOLOGY B（3）
出版时间
机构 UNIV NOTRE D.（2）
作者 MYERSWARD RL（3）

Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HWANG WS, TAHY K, ZHAO P, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING H, SEABAUGH A, JENA D

Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001)

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

XU P, BARBER SD, SCHOELZ JK, ACKERMAN ML, QI DJ, THIBADO PM, WHEELER VD, NYAKITI LO, MYERSWARD RL, EDDY CR, GASKILL DK

Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HWANG WS, TAHY K, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING HL, SEABAUGH A, JENA D