国家/地区 Australia（8）
关键词 GRAPHENE（3） GRAPHENE OXIDE（2）
出版物 CARBON（2） NANOTECHNOLOGY（2）
出版时间 2014（3） 2015（3） 2013（2）
机构 QUEENSLAND U.（7）
作者 NOTARIANNI M（8）

Graphene-based supercapacitor with carbon nanotube film as highly efficient current collector

NANOTECHNOLOGY

NOTARIANNI M, LIU JZ, MIRRI F, PASQUALI M, MOTTA N

Highly NO2 sensitive caesium doped graphene oxide conductometric sensors

BEILSTEIN JOURNAL OF NANOTECHNOLOGY

PILOTO C, NOTARIANNI M, SHAFIEI M, TARAN E, GALPAYA D, YAN C, MOTTA N

Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV

CARBON

GUPTA B, NOTARIANNI M, MISHRA N, SHAFIEI M, IACOPI F, MOTTA N

Electrochemically Exfoliated Graphene for Electrode Films: Effect of Graphene Flake Thickness on the Sheet Resistance and Capacitive Properties

LANGMUIR

LIU JZ, NOTARIANNI M, WILL G, TIONG VT, WANG HX, MOTTA N

Graphene-based thin film supercapacitor with graphene oxide as dielectric spacer

APPLIED PHYSICS LETTERS

LIU JZ, GALPAYA D, NOTARIANNI M, YAN C, MOTTA N

Examining the electrical and chemical properties of reduced graphene oxide with varying annealing temperatures in argon atmosphere

APPLIED SURFACE SCIENCE

CHAMBERS BA, NOTARIANNI M, LIU JZ, MOTTA N, ANDERSSON GG

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors

NANOTECHNOLOGY

AHMED M, KHAWAJA M, NOTARIANNI M, WANG B, GODING D, GUPTA B, BOECKL JJ, TAKSHI A, MOTTA N, SADDOW SE, IACOPI F

Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV (vol 68, pg 563, 2014)

CARBON

GUPTA B, NOTARIANNI M, MISHRA N, SHAFIEI M, IACOPI F, MOTTA N