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关键词
出版物 APPLIED PHYSICS LETTERS（3）
出版时间
机构
作者 NYAKITI LO（3）

Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC

APPLIED PHYSICS LETTERS

TADJER MJ, ANDERSON TJ, MYERSWARD RL, WHEELER VD, NYAKITI LO, ROBINSON Z, EDDY CR, GASKILL DK, KOEHLER AD, HOBART KD, KUB FJ

Detection of polar chemical vapors using epitaxial graphene grown on SiC (0001)

APPLIED PHYSICS LETTERS

NAGAREDDY VK, CHAN HK, HERNANDEZ SC, WHEELER VD, MYERSWARD RL, NYAKITI LO, EDDY CR, WALTON SG, GOSS JP, WRIGHT NG, GASKILL DK, HORSFALL AB

Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

APPLIED PHYSICS LETTERS

TADJER MJ, ANDERSON TJ, HOBART KD, NYAKITI LO, WHEELER VD, MYERSWARD RL, GASKILL DK, EDDY CR, KUB FJ, CALLE F