国家/地区 China（7） Malaysia（7）
关键词 GRAPHENE QUANTUM DO.（7） CONDUCTION MECHANIS.（4） ELECTRICAL CHARACTE.（2）
FLEXIBLE（2） GRAPHENE（2） NONVOLATILE MEMORY（2）
出版物 ORGANIC ELECTRONICS（3） SCIENTIFIC REPORTS（3）
出版时间 2015（3） 2016（3） 2019（3） 2018（2）
机构 FUZHOU UNIV（4） UNIV KEBANGS.（4） HANYANG UNIV（2）
作者 OOI PC（14）

Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

JAAFAR MM, OOI PC, WEE MFMR, HANIFF MASM, MOHAMED MA, CHANG EY, MAJLIS BY, DEE CF

Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer

SCIENTIFIC REPORTS

OOI PC, HANIFF MASM, WEE MFMR, GOH BT, DEE CF, MOHAMED MA, MAJLIS BY

Wafer-Scale Fabrication of Nitrogen-Doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection

ACS APPLIED MATERIALS INTERFACES

HANIFF MASM, ARIFFIN NHZ, HAFIZ SM, OOI PC, SYONO MI, HASHIM AM

Fabrication of indium-tin-oxide free, all-solution-processed flexible nanogenerator device using nanocomposite of barium titanate and graphene quantum dots in polyvinylidene fluoride polymer matrix

ORGANIC ELECTRONICS

BAKAR EA, MOHAMED MA, OOI PC, WEE MFMR, DEE CF, MAJLIS BY

Fabrication of transparent bistable switching memory device using plasmapolymerized hexamethyldisiloxane layers with embedded graphene quantum dots

THIN SOLID FILMS

OOI PC, WEE MFMR, DEE CF, YAP CC, SALLEH MM, MAJLIS BY

Reduced graphene oxide preparation and its applications in solution-processed write-once-read-many-times graphene-based memory device

CARBON

OOI PC, HANIFF MASM, WEE MFMR, DEE CF, GOH BT, MOHAMED MA, MAJLIS BY

Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS

Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS

Room temperature pH-dependent ammonia gas sensors using graphene quantum dots

SENSORS ACTUATORS BCHEMICAL

CHEN W, LI FS, OOI PC, YE Y, KIM TW, GUO TL

Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

IEEE ELECTRON DEVICE LETTERS

LIN J, OOI PC, LI FS, GUO TL, KIM TW