国家/地区 Japan（5）
关键词
出版物 APPLIED PHYSICS EXPRESS（5）
出版时间 2008（2） 2009（2）
机构 UNIV AIZU（3）
作者 OTSUJI T（5）

Nanoscale probing of thermally excited evanescent fields in an electrically biased graphene by near-field optical microscopy

APPLIED PHYSICS EXPRESS

LIN KT, NEMA H, WENG QC, KIM S, SUGAWARA K, OTSUJI T, KOMIYAMA S, KAJIHARA Y

Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator

APPLIED PHYSICS EXPRESS

DUBINOV AA, ALESHKIN VY, RYZHII M, OTSUJI T, RYZHII V

Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors

APPLIED PHYSICS EXPRESS

SANO E, OTSUJI T

Device model for graphene nanoribbon phototransistor

APPLIED PHYSICS EXPRESS

RYZHII V, MITIN V, RYZHII M, RYABOVA N, OTSUJI T

Tunneling current-voltage characteristics of graphene field-effect transistor

APPLIED PHYSICS EXPRESS

RYZHII V, RYZHII M, OTSUJI T