国家/地区 Germany(24) Sweden(3) Italy(2)
关键词 GRAPHENE(13) FIELDEFFECT TRANSIS.(5) HEXAGONAL BORON NIT.(3)
BILAYER GRAPHENE(2) EDGE CONTACT(2) MAXIMUM FREQUENCY O.(2)
PHOTODETECTOR(2) RAMAN SPECTROSCOPY(2) RESISTANCE(2)
TRANSCONDUCTANCE(2) TRANSIT FREQUENCY(2)
出版物 OPTICS EXPRESS(4) ACS APPLIED ELECTRO.(3) NANOSCALE(3)
SCIENTIFIC REPORTS(3) APPLIED PHYSICS LET.(2) IEEE TRANSACTIONS O.(2)
NANO LETTERS(2) PHYSICA STATUS SOLI.(2)
出版时间 2017(6) 2020(5) 2016(4) 2019(4) 2021(4) 2015(3) 2010(2)
机构 AMO GMBH(15) CHALMERS UNI.(3) RHEIN WESTFA.(3) APPL MICRO .(2)
作者 OTTO M(33)

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

BANSZERUS L, FABIAN T, MOLLER S, ICKING E, HEIMING H, TRELLENKAMP S, LENTZ F, NEUMAIER D, OTTO M, WATANABE K, TANIGUCHI T, LIBISCH F, VOLK C, STAMPFER C

ACS NANO

DE FAZIO D, UZLU B, TORRE I, MONASTERIOBALCELLS C, GUPTA S, KHODKOV T, BI Y, WANG ZX, OTTO M, LEMME MC, GOOSSENS S, NEUMAIER D, KOPPENS FHL

NANOSCALE ADVANCES

FEIJOO PC, PASADAS F, BONMANN M, ASAD M, YANG XN, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J, JIMENEZ D

IEEE TRANSACTIONS ON ELECTRON DEVICES

BONMANN M, KRIVIC M, YANG XX, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

SCIENTIFIC REPORTS

UZLU B, WANG ZX, LUKAS S, OTTO M, LEMME MC, NEUMAIER D

ACS APPLIED ELECTRONIC MATERIALS

RUHKOPF J, SAWALLICH S, NAGEL M, OTTO M, PLACHETKA U, KREMERS T, SCHNAKENBERG U, KATARIA S, LEMME MC

ACS APPLIED ELECTRONIC MATERIALS

WANG ZX, UZLU B, SHAYGAN M, OTTO M, RIBEIRO M, MARIN EG, IANNACCONE G, FIORI G, ELSAYED MS, NEGRA R, NEUMAIER D

IEEE ELECTRON DEVICE LETTERS

BONMANN M, ASAD M, YANG XX, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

IEEE TRANSACTIONS ON ELECTRON DEVICES

PANDEY H, SHAYGAN M, SAWALLICH S, KATARIA S, ZHENXING W, NOCULAK A, OTTO M, NAGEL M, NEGRA R, NEUMAIER D, LEMME MC