国家/地区 Sweden（3） Germany（2）
关键词 FIELDEFFECT TRANSISTOR（5）
出版物
出版时间 2020（2）
机构 CHALMERS UNI.（3） AMO GMBH（2）
作者 OTTO M（5）

Effects of Self-Heating on f(T) and f(max) Performance of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

BONMANN M, KRIVIC M, YANG XX, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

Graphene Field-Effect Transistors With High Extrinsic f(T) and f(max)

IEEE ELECTRON DEVICE LETTERS

BONMANN M, ASAD M, YANG XX, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

NANO LETTERS

SZAFRANEK BN, SCHALL D, OTTO M, NEUMAIER D, KURZ H

Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal

ANNALEN DER PHYSIK

SHAYGAN M, OTTO M, SAGADE AA, CHAVARIN CA, BACHER G, MERTIN W, NEUMAIER D