国家/地区 France（5） Spain（2）
关键词 GRAPHENE（7）
出版物 IEEE TRANSACTIONS O.（2）
出版时间 2020（3）
机构 UNIV AUTONOM.（2） UNIV BORDEAU.（2）
作者 PALLECCHI E（7）

Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

PACHECOSANCHEZ A, MAVREDAKIS N, FEIJOO PC, WEI W, PALLECCHI E, HAPPY H, JIMENEZ D

High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

DENG M, FADIL D, WEI W, PALLECCHI E, HAPPY H, DAMBRINE G, DE MATOS M, ZIMMER T, FREGONESE S

A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

APPLIED SCIENCESBASEL

FADIL D, PASSI V, WEI W, BEN SALK S, ZHOU D, STRUPINSKI W, LEMME MC, ZIMMER T, PALLECCHI E, HAPPY H, FREGONESE S

Velocity. Saturation' Effect on. Low.Frequency Noise in. Short Channel Single Layer Graphene Field Effect Transistors

ACS APPLIED ELECTRONIC MATERIALS

MAVREDAKIS N, WEI W, PALLECCHI E, VIGNAUD D, HAPPY H, CORTADELLA RG, CALIA AB, GARRIDO JA, JIMENEZ D

Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications

ELECTRONIC MATERIALS LETTERS

MELE D, MEHDHBI S, FADIL D, WEI W, OUERGHI A, LEPILLIET S, HAPPY H, PALLECCHI E

2.5 GHz integrated graphene RF power amplifier on SiC substrate

SOLIDSTATE ELECTRONICS

HANNA T, DELTIMPLE N, KHENISSA MS, PALLECCHI E, HAPPY H, FREGONESE S

Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES

WEI W, ZHOU X, DEOKAR G, KIM H, BELHAJ MM, GALOPIN E, PALLECCHI E, VIGNAUD D, HAPPY H