国家/地区 China（4）
关键词
出版物
出版时间 2016（4）
机构 CHINESE ACAD SCI（4）
作者 PENG SG（4）

Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WANG SQ, JIN Z, MUHAMMAD A, PENG SG, HUANG XN, ZHANG DY, SHI JY

Abnormal Dirac point shift in graphene field-effect transistors

MATERIALS RESEARCH EXPRESS

WANG SQ, JIN Z, HUANG XN, PENG SG, ZHANG DY, SHI JY

Surface-potential-based physical compact model for graphene field effect transistor

JOURNAL OF APPLIED PHYSICS

WANG LF, PENG SG, WANG W, XU GW, JI ZY, LU ND, LI L, JIN Z, LIU M

Characterization of the quality of metal-graphene contact with contact end resistance measurement

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

WANG SQ, MAO DC, MUHAMMAD A, PENG SG, ZHANG DY, SHI JY, JIN Z