国家/地区 Korea（2）
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作者 QIAO ZH（2）

Gate-tunable current partition in graphene-based topological zero lines

PHYSICAL REVIEW B

WANG K, REN YF, DENG XZ, YANG SYA, JUNG J, QIAO ZH

The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors

ANGEWANDTE CHEMIEINTERNATIONAL EDITION

CHEN JF, HAN YL, KONG XH, DENG XZ, PARK HJ, GUO YL, JIN S, QI ZK, LEE Z, QIAO ZH, RUOFF RS, JI HX