国家/地区 France（5）
关键词
出版物 APPLIED PHYSICS LET.（3）
出版时间 2013（3）
机构 UNIV PARIS 1.（5）
作者 QUERLIOZ D（6）

On the non-linear effects in graphene devices

JOURNAL OF PHYSICS DAPPLIED PHYSICS

NGUYEN VH, ALARCON A, BERRADA S, DO VN, STMARTIN J, QUERLIOZ D, BOURNEL A, DOLLFUS P

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

APPLIED PHYSICS LETTERS

BERRADA S, NGUYEN VH, QUERLIOZ D, STMARTIN J, ALARCON A, CHASSAT C, BOURNEL A, DOLLFUS P

Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

JOURNAL OF COMPUTATIONAL ELECTRONICS

NGUYEN VH, SAINTMARTIN J, QUERLIOZ D, MAZZAMUTO F, BOURNEL A, NIQUET YM, DOLLFUS P

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ALARCON A, NGUYEN VH, BERRADA S, QUERLIOZ D, SAINTMARTIN J, BOURNEL A, DOLLFUS P

Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder

APPLIED PHYSICS LETTERS

QUERLIOZ D, APERTET Y, VALENTIN A, HUET K, BOURNEL A, GALDINRETAILLEAU S, DOLLFUS P

Proposal for a graphene-based all-spin logic gate

APPLIED PHYSICS LETTERS

SU L, ZHAO WS, ZHANG Y, QUERLIOZ D, ZHANG YG, KLEIN JO, DOLLFUS P, BOURNEL A