国家/地区 Germany（6）
关键词 GRAPHENE（4） ARPES（2） DOPING（2）
SILICON CARBIDE（2）
出版物 2D MATERIALS（2）
出版时间
机构 UNIV ERLANGE.（3）
作者 RISTEIN J（6）

Length-dependence of light-induced currents in graphene

JOURNAL OF PHYSICS BATOMIC MOLECULAR OPTICAL PHYSICS

BOOLAKEE T, HEIDE C, WAGNER F, OTT C, SCHLECHT M, RISTEIN J, WEBER HB, HOMMELHOFF P

Polarization doping of graphene on silicon carbide

2D MATERIALS

MAMMADOV S, RISTEIN J, KOCH RJ, OSTLER M, RAIDEL C, WANKE M, VASILIAUSKAS R, YAKIMOVA R, SEYLLER T

Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide

PHYSICAL REVIEW LETTERS

RISTEIN J, MAMMADOV S, SEYLLER T

Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RISTEIN J, ZHANG WY, SPECK F, OSTLER M, LEY L, SEYLLER T

Work function of graphene multilayers on SiC(0001)

2D MATERIALS

MAMMADOV S, RISTEIN J, KRONE J, RAIDEL C, WANKE M, WIESMANN V, SPECK F, SEYLLER T

Gateless patterning of epitaxial graphene by local intercalation

NANOTECHNOLOGY

SORGER C, HERTEL S, JOBST J, STEINER C, MEIL K, ULLMANN K, ALBERT A, WANG Y, KRIEGER M, RISTEIN J, MAIER S, WEBER HB