国家/地区 Germany（3）
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机构 UNIV ERLANGEN NURNBERG（3）
作者 RISTEIN J（3）

Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide

PHYSICAL REVIEW LETTERS

RISTEIN J, MAMMADOV S, SEYLLER T

Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RISTEIN J, ZHANG WY, SPECK F, OSTLER M, LEY L, SEYLLER T

Gateless patterning of epitaxial graphene by local intercalation

NANOTECHNOLOGY

SORGER C, HERTEL S, JOBST J, STEINER C, MEIL K, ULLMANN K, ALBERT A, WANG Y, KRIEGER M, RISTEIN J, MAIER S, WEBER HB