国家/地区 Italy（8）
关键词 GRAPHENE（3） FIELDEFFECT TRANSIS.（2） TRANSFER CHARACTERI.（2）
出版物 APPLIED PHYSICS LET.（2） NANOTECHNOLOGY（2）
出版时间 2013（2） 2016（2）
机构 UNIV SALERNO（6）
作者 ROMEO F（9）

Scattering Theory of Graphene Grain Boundaries

MATERIALS

ROMEO F, DI BARTOLOMEO A

Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors

DIAMOND RELATED MATERIALS

DI BARTOLOMEO A, SANTANDREA S, GIUBILEO F, ROMEO F, PETROSINO M, CITRO R, BARBARA P, LUPINA G, SCHROEDER T, RUBINO A

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

JOURNAL OF PHYSICSCONDENSED MATTER

DI BARTOLOMEO A, GIUBILEO F, IEMMO L, ROMEO F, SANTANDREA S, GAMBARDELLA U

Rashba spin-orbit-interaction-based quantum pump in graphene

APPLIED PHYSICS LETTERS

BERCIOUX D, URBAN DF, ROMEO F, CITRO R

Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors

NANOTECHNOLOGY

DI BARTOLOMEO A, GIUBILEO F, SANTANDREA S, ROMEO F, CITRO R, SCHROEDER T, LUPINA G

Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

NANOMATERIALS

GIUBILEO F, DI BARTOLOMEO A, MARTUCCIELLO N, ROMEO F, IEMMO L, ROMANO P, PASSACANTANDO M

Leakage and field emission in side-gate graphene field effect transistors

APPLIED PHYSICS LETTERS

DI BARTOLOMEO A, GIUBILEO F, IEMMO L, ROMEO F, RUSSO S, UNAL S, PASSACANTANDO M, GROSSI V, CUCOLO AM

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

NANOTECHNOLOGY

DI BARTOLOMEO A, GIUBILEO F, ROMEO F, SABATINO P, CARAPELLA G, IEMMO L, SCHROEDER T, LUPINA G

Valley to charge current conversion in graphene linear defects

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

ROMEO F