国家/地区 Usa（10） Poland（5）
关键词 GRAPHENE（6） NOISE（2） TETRAHYDROFURAN（2）
出版物 APPLIED PHYSICS LET.（7）
出版时间 2022（4） 2013（3） 2012（2） 2020（2） 2023（2）
机构 UNIV CALIF R.（5） RENSSELAER P.（3）
作者 RUMYANTSEV S（16）

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

MATERIALS

DUB M, SAI P, PRZEWLOKA A, KRAJEWSKA A, SAKOWICZ M, PRYSTAWKO P, KACPERSKI J, PASTERNAK I, CYWINSKI G, BUT D, KNAP W, RUMYANTSEV S

Graphene Epoxy-Based Composites as Efficient Electromagnetic Absorbers in the Extremely High-Frequency Band

ACS APPLIED MATERIALS INTERFACES

BARANI Z, KARGAR F, GODZISZEWSKI K, REHMAN A, YASHCHYSHYN Y, RUMYANTSEV S, CYWINSKI G, KNAP W, BALANDIN AA

Selective Sensing of Individual Gases Using Graphene Devices

IEEE SENSORS JOURNAL

RUMYANTSEV S, LIU GX, POTYRAILO RA, BALANDIN AA, SHUR MS

Reduction of 1/f noise in graphene after electron-beam irradiation

APPLIED PHYSICS LETTERS

HOSSAIN MZ, RUMYANTSEV S, SHUR MS, BALANDIN AA

Origin of 1/f noise in graphene multilayers: Surface vs. volume

APPLIED PHYSICS LETTERS

LIU GX, RUMYANTSEV S, SHUR MS, BALANDIN AA

Selective Gas Sensing with a Single Pristine Graphene Transistor

NANO LETTERS

RUMYANTSEV S, LIU GX, SHUR MS, POTYRAILO RA, BALANDIN AA

Graphene thickness-graded transistors with reduced electronic noise

APPLIED PHYSICS LETTERS

LIU GX, RUMYANTSEV S, SHUR M, BALANDIN AA

Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms

JOURNAL OF PHYSICSCONDENSED MATTER

RUMYANTSEV S, LIU G, STILLMAN W, SHUR M, BALANDIN AA

Low-frequency electronic noise in the double-gate single-layer graphene transistors

APPLIED PHYSICS LETTERS

LIU G, STILLMAN W, RUMYANTSEV S, SHAO Q, SHUR M, BALANDIN AA

Graphene/AlGaN/GaN RF Switch

MICROMACHINES

YASHCHYSHYN Y, BAJURKO P, SOBOLEWSKI J, SAI P, PRZEWLOKA A, KRAJEWSKA A, PRYSTAWKO P, DUB M, KNAP W, RUMYANTSEV S, CYWINSKI G