国家/地区 Japan（3）
关键词
出版物 JAPANESE JOURNAL OF.（2）
出版时间 2011（2）
机构 TOHOKU UNIV（3）
作者 SAITO E（3）

Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si

APPLIED PHYSICS EXPRESS

FUKIDOME H, ABE S, TAKAHASHI R, IMAIZUMI K, INOMATA S, HANDA H, SAITO E, ENTA Y, YOSHIGOE A, TERAOKA Y, KOTSUGI M, OHKOUCHI T, KINOSHITA T, ITO S, SUEMITSU M

Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations

JAPANESE JOURNAL OF APPLIED PHYSICS

HANDA H, TAKAHASHI R, ABE S, IMAIZUMI K, SAITO E, JUNG MH, ITO S, FUKIDOME H, SUEMITSU M

Epitaxial Growth Processes of Graphene on Silicon Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

FUKIDOME H, MIYAMOTO Y, HANDA H, SAITO E, SUEMITSU M