国家/地区 Germany（7）
关键词 EPITAXIAL GRAPHENE（3） RESISTANCE ANISOTRO.（3） GRAPHENE BUFFER LAY.（2）
SIC TERRACE STEP（2）
出版物
出版时间 2019（2）
机构 PHYS TECH BUNDESANSTALT（7）
作者 SCHUMACHER HW（7）

Silicon Carbide Stacking-Order-Induced Doping Variation in Epitaxial Graphene

ADVANCED FUNCTIONAL MATERIALS

PAKDEHI DM, SCHADLICH P, NGUYEN TTN, ZAKHAROV AA, WUNDRACK S, NAJAFIDEHAGHANI E, SPECK F, PIERZ K, SEYLLER T, TEGENKAMP C, SCHUMACHER HW

Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC

ACS APPLIED NANO MATERIALS

PAKDEHI DM, PIERZ K, WUNDRACK S, APROJANZ J, NGUYEN TTN, DZIOMBA T, HOHLS F, BAKIN A, STOSCH R, TEGENKAMP C, AHLERS FJ, SCHUMACHER HW

Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy

PHYSICAL REVIEW B

WUNDRACK S, PAKDEHI DM, SCHADLICH P, SPECK F, PIERZ K, SEYLLER T, SCHUMACHER HW, BAKIN A, STOSCH R

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

ACS APPLIED MATERIALS INTERFACES

PAKDEHI DM, APROJANZ J, SINTERHAUF A, PIERZ K, KRUSKOPF M, WILLKE P, BARINGHAUS J, STOCKMANN JP, TRAEGER GA, HOHLS F, TEGENKAMP C, WENDEROTH M, AHLERS FJ, SCHUMACHER HW

Bilayer graphene quantum dot defined by topgates

JOURNAL OF APPLIED PHYSICS

MULLER A, KAESTNER B, HOHLS F, WEIMANN T, PIERZ K, SCHUMACHER HW

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

2D MATERIALS

KRUSKOPF M, PAKDEHI DM, PIERZ K, WUNDRACK S, STOSCH R, DZIOMBA T, GOTZ M, BARINGHAUS J, APROJANZ J, TEGENKAMP C, LIDZBA J, SEYLLER T, HOHLS F, AHLERS FJ, SCHUMACHER HW

Epitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment

JOURNAL OF PHYSICSCONDENSED MATTER

KRUSKOPF M, PIERZ K, WUNDRACK S, STOSCH R, DZIOMBA T, KALMBACH CC, MULLER A, BARINGHAUS J, TEGENKAMP C, AHLERS FJ, SCHUMACHER HW