国家/地区 Italy（8）
关键词 GRAPHENE（4） MODELING（3） DEVICE MODELING（2）
GRAPHENE BASE TRANS.（2） MOBILITY（2） MONTE CARLO（2）
TRANSMISSION LINE M.（2）
出版物 IEEE TRANSACTIONS O.（4） MICROELECTRONIC ENG.（2） SOLIDSTATE ELECTRON.（2）
出版时间 2013（2） 2014（2）
机构 UNIV UDINE（8）
作者 SELMI L（9）

Dependable Contact Related Parameter Extraction in Graphene-Metal Junctions

ADVANCED ELECTRONIC MATERIALS

GAHOI A, KATARIA S, DRIUSSI F, VENICA S, PANDEY H, ESSENI D, SELMI L, LEMME MC

On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance

IEEE TRANSACTIONS ON ELECTRON DEVICES

VENICA S, DRIUSSI F, GAHOI A, PALESTRI P, LEMME MC, SELMI L

Simulation of DC and RF Performance of the Graphene Base Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

VENICA S, DRIUSSI F, PALESTRI P, ESSENI D, VAZIRI S, SELMI L

Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling

IEEE TRANSACTIONS ON ELECTRON DEVICES

PAUSSA A, FIORI G, PALESTRI P, GEROMEL M, ESSENI D, IANNACCONE G, SELMI L

Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model

SOLIDSTATE ELECTRONICS

BRESCIANI M, PALESTRI P, ESSENI D, SELMI L, SZAFRANEK B, NEUMAIER D

Modeling, simulation and design of the vertical Graphene Base Transistor

MICROELECTRONIC ENGINEERING

DRIUSSI F, PALESTRI P, SELMI L

Simple and efficient modeling of the E-k relationship and low-field mobility in Graphene Nano-Ribbons

SOLIDSTATE ELECTRONICS

BRESCIANI M, PALESTRI P, ESSENI D, SELMI L

Graphene Base Transistors With Bilayer Tunnel Barriers: Performance Evaluation and Design Guidelines

IEEE TRANSACTIONS ON ELECTRON DEVICES

VENICA S, DRIUSSI F, VAZIRI S, PALESTRI P, SELMI L

Backscattering and common-base current gain of the Graphene Base Transistor (GBT)

MICROELECTRONIC ENGINEERING

VENICA S, DRIUSSI F, PALESTRI P, SELMI L