国家/地区 | India(2) |
关键词 | |
出版物 | |
出版时间 | 2019(2) |
机构 | |
作者 | SENGUPTA J(2) |
Modeling and computation of double drift region transit time diode performance based on graphene-SiC
INTERNATIONAL JOURNAL OF NUMERICAL MODELLINGELECTRONIC NETWORKS DEVICES FIELDS
GHIVELA GC, SENGUPTA J
BULLETIN OF MATERIALS SCIENCE
SENGUPTA J, DAS K, NANDI UN, JACOB C