国家/地区 Germany（3）
关键词
出版物
出版时间 2012（3）
机构 UNIV ERLANGEN NURNBERG（3）
作者 SEYLLER T（3）

Growth and electronic structure of nitrogen-doped graphene on Ni(111)

PHYSICAL REVIEW B

KOCH RJ, WESER M, ZHAO W, VINES F, GOTTERBARM K, KOZLOV SM, HOFERT O, OSTLER M, PAPP C, GEBHARDT J, STEINRUCK HP, GORLING A, SEYLLER T

Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide

PHYSICAL REVIEW LETTERS

RISTEIN J, MAMMADOV S, SEYLLER T

Implanted bottom gate for epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WALDMANN D, JOBST J, FROMM F, SPECK F, SEYLLER T, KRIEGER M, WEBER HB