国家/地区 Germany（5）
关键词
出版物
出版时间 2012（5）
机构 UNIV ERLANGE.（3）
作者 SEYLLER T（5）

Influence of structural properties on ballistic transport in nanoscale epitaxial graphene cross junctions

NANOTECHNOLOGY

BOCK C, WEINGART S, KARAISSARIDIS E, KUNZE U, SPECK F, SEYLLER T

Growth and electronic structure of nitrogen-doped graphene on Ni(111)

PHYSICAL REVIEW B

KOCH RJ, WESER M, ZHAO W, VINES F, GOTTERBARM K, KOZLOV SM, HOFERT O, OSTLER M, PAPP C, GEBHARDT J, STEINRUCK HP, GORLING A, SEYLLER T

Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide

PHYSICAL REVIEW LETTERS

RISTEIN J, MAMMADOV S, SEYLLER T

Implanted bottom gate for epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WALDMANN D, JOBST J, FROMM F, SPECK F, SEYLLER T, KRIEGER M, WEBER HB

Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)

BEILSTEIN JOURNAL OF NANOTECHNOLOGY

HELD C, SEYLLER T, BENNEWITZ R