国家/地区 Usa（5） Japan（2） Russia（2）
关键词 GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（4）
出版时间
机构 UNIV CALIF R.（4） TOHOKU UNIV（3）
作者 SHUR M（9）

Graphene based plasma-wave devices for terahertz applications

APPLIED PHYSICS LETTERS

RYZHII V, OTSUJI T, SHUR M

Vertical Hot-electron Terahertz Detectors Based on Black-As1-xPx/graphene/black-As1-yPy Heterostructures

SENSORS MATERIALS

RYZHII M, RYZHII V, MITIN V, SHUR M, OTSUJI T

Double-graphene-layer terahertz laser: concept, characteristics, and comparison

OPTICS EXPRESS

RYZHII V, DUBINOV AA, OTSUJI T, ALESHKIN VY, RYZHII M, SHUR M

Graphene thickness-graded transistors with reduced electronic noise

APPLIED PHYSICS LETTERS

LIU GX, RUMYANTSEV S, SHUR M, BALANDIN AA

Low-Frequency Current Fluctuations in "Graphene-like" Exfoliated Thin-Films of Bismuth Selenide Topological Insulators

ACS NANO

HOSSAIN MZ, RUMYANTSEV SL, SHAHIL KMF, TEWELDEBRHAN D, SHUR M, BALANDIN AA

Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms

JOURNAL OF PHYSICSCONDENSED MATTER

RUMYANTSEV S, LIU G, STILLMAN W, SHUR M, BALANDIN AA

Low-frequency electronic noise in the double-gate single-layer graphene transistors

APPLIED PHYSICS LETTERS

LIU G, STILLMAN W, RUMYANTSEV S, SHAO Q, SHUR M, BALANDIN AA

Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

APPLIED PHYSICS LETTERS

STOLYAROV MA, LIU GX, RUMYANTSEV SL, SHUR M, BALANDIN AA

Resonant Plasmonic Terahertz Detection in Gated Graphene p-i-n Field-Effect Structures Enabled by Nonlinearity from Zener-Klein Tunneling

PHYSICAL REVIEW APPLIED

RYZHII V, OTSUJI T, RYZHII M, MITIN V, SHUR M