国家/地区 Usa（3）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间 2014（2）
机构 UNIV TEXAS AUSTIN（3）
作者 SONDE S（3）

Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms

ACS NANO

CORBET CM, MCCLELLAN C, KIM K, SONDE S, TUTUC E, BANERJEE SK

Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment

APPLIED PHYSICS LETTERS

CHOWDHURY SF, SONDE S, RAHIMI S, TAO L, BANERJEE S, AKINWANDE D

Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

APPLIED PHYSICS LETTERS

MOVVA HCP, RAMON ME, CORBET CM, SONDE S, CHOWDHURY SF, CARPENTER G, TUTUC E, BANERJEEL SK