国家/地区 Usa（5） France（2）
关键词
出版物 MRS BULLETIN（2）
出版时间 2009（2） 2012（2） 2017（2）
机构 GEORGIA INST.（3）
作者 SOUKIASSIAN P（9）

Graphene etching on SiC grains as a path to interstellar polycyclic aromatic hydrocarbons formation

NATURE COMMUNICATIONS

MERINO P, SVEC M, MARTINEZ JI, JELINEK P, LACOVIG P, DALMIGLIO M, LIZZIT S, SOUKIASSIAN P, CERNICHARO J, MARTINGAGO JA

Graphene: Fundamentals and functionalities

MRS BULLETIN

LU WJ, SOUKIASSIAN P, BOECKL J

Will graphene be the material of the 21st century?

MRS BULLETIN

SOUKIASSIAN P

Nano-structures developing at the graphene/silicon carbide interface

SURFACE SCIENCE

VIZZINI S, ENRIQUEZ H, CHIANG S, OUGHADDOU H, SOUKIASSIAN P

Multilayer epitaxial graphene grown on the SiC (000(1)over-bar) surface; structure and electronic properties

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SPRINKLE M, HICKS J, TEJEDA A, TALEBIBRAHIMI A, LE FEVRE P, BERTRAN F, TINKEY H, CLARK MC, SOUKIASSIAN P, MARTINOTTI D, HASS J, CONRAD EH

First Direct Observation of a Nearly Ideal Graphene Band Structure

PHYSICAL REVIEW LETTERS

SPRINKLE M, SIEGEL D, HU Y, HICKS J, TEJEDA A, TALEBIBRAHIMI A, LE FEVRE P, BERTRAN F, VIZZINI S, ENRIQUEZ H, CHIANG S, SOUKIASSIAN P, BERGER C, DE HEER WA, LANZARA A, CONRAD EH

Epitaxial graphene: the material for graphene electronics

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

SPRINKLE M, SOUKIASSIAN P, DE HEER WA, BERGER C, CONRAD EH

Direct graphene growth on transitional metal with solid carbon source and its converting into graphene/transitional metal oxide heterostructure

CARBON

PARK J, BACK T, FAIRCHILD SB, MITCHEL WC, ELHAMRI S, BOECKL J, MARTINOTTI D, DOUILLARD L, SOUKIASSIAN P

Thermal Transport in Supported Graphene: Substrate Effects on Collective Excitations

PHYSICAL REVIEW APPLIED

FRANCELANORD A, SOUKIASSIAN P, GLATTLI C, WIMMER E