国家/地区 Japan（3）
关键词
出版物 JOURNAL OF APPLIED PHYSICS（3）
出版时间
机构
作者 SOUMA S（3）

Impact of electron-phonon scattering on the strain-induced current-blocking effect in graphene field-effect transistors

JOURNAL OF APPLIED PHYSICS

SOUMA S, OGAWA M

An interface trap charge model for simulation of graphene-based synaptic field effect transistors

JOURNAL OF APPLIED PHYSICS

OSHIO R, SOUMA S

Transient performance analysis of graphene FET gated via ionic solid by numerical simulations based on tight-binding method and Nernst-Planck-Poisson equations

JOURNAL OF APPLIED PHYSICS

ARIHORI K, OGAWA M, SOUMA S, SATOIWANAGA J, SUZUKI MA