国家/地区 China（3）
关键词
出版物
出版时间
机构 HEILONGJIANG UNIV（3）
作者 SUN YM（3）

Eliminating negative-set behavior by adding a graphene blocking layer in resistive switching memory devices based on epoxy resin

APPLIED PHYSICS EXPRESS

SUN YM, WEN DZ, SUN FY

Ternary Resistive Switching Memory Behavior in Graphene Oxide Layer

NANO

LU JG, SUN YM, WEN DZ

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

SCIENTIFIC REPORTS

SUN YM, WEN DZ, BAI XD, LU JG, AI CP