国家/地区 Japan（2）
关键词 2D MATERIAL（2）
出版物
出版时间
机构
作者 TANIGUCHI T（2）

ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

ADVANCED ELECTRONIC MATERIALS

MUKHERJEE B, HAYAKAWA R, WATANABE K, TANIGUCHI T, NAKAHARAI S, WAKAYAMA Y

Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures

ACS APPLIED MATERIALS INTERFACES

IWASAKI T, ENDO K, WATANABE E, TSUYA D, MORITA Y, NAKAHARAI S, NOGUCHI Y, WAKAYAMA Y, WATANABE K, TANIGUCHI T, MORIYAMA S