国家/地区 Japan（4）
关键词 HETEROSTRUCTURE（4）
出版物
出版时间
机构 NATL INST MA.（2） UNIV TOKYO（2）
作者 WATANABE K（4）

ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

ADVANCED ELECTRONIC MATERIALS

MUKHERJEE B, HAYAKAWA R, WATANABE K, TANIGUCHI T, NAKAHARAI S, WAKAYAMA Y

Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-Layer-ReS2/h-BN/Graphene Heterostructures

ADVANCED FUNCTIONAL MATERIALS

MUKHERJEE B, ZULKEFLI A, WATANABE K, TANIGUCHI T, WAKAYAMA Y, NAKAHARAI S

Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

ACS APPLIED MATERIALS INTERFACES

UWANNO T, TANIGUCHI T, WATANABE K, NAGASHIO K

Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system

2D MATERIALS

UWANNO T, HATTORI Y, TANIGUCHI T, WATANABE K, NAGASHIO K