国家/地区 Usa（3） China（2）
关键词
出版物 PHYSICAL REVIEW B（6）
出版时间 2011（3） 2010（2）
机构 NATL RENEWAB.（3） FUDAN UNIV（2）
作者 WEI SH（6）

Carrier-mediated long-range ferromagnetism in electron-doped Fe-C-4 and Fe-N-4 incorporated graphene

PHYSICAL REVIEW B

LEE AT, KANG J, WEI SH, CHANG KJ, KIM YH

Theoretical study of corundum as an ideal gate dielectric material for graphene transistors

PHYSICAL REVIEW B

HUANG B, XU Q, WEI SH

Strain control of magnetism in graphene decorated by transition-metal atoms

PHYSICAL REVIEW B

HUANG B, YU JJ, WEI SH

Controlling doping in graphene through a SiC substrate: A first-principles study

PHYSICAL REVIEW B

HUANG B, XIANG HJ, WEI SH

Thermodynamically stable single-side hydrogenated graphene

PHYSICAL REVIEW B

XIANG HJ, KAN EJ, WEI SH, GONG XG, WHANGBO MH

Structural motifs in oxidized graphene: A genetic algorithm study based on density functional theory

PHYSICAL REVIEW B

XIANG HJ, WEI SH, GONG XG