国家/地区 Norway（4） Japan（3）
关键词 GRAPHENE（8）
出版物 NANO LETTERS（3）
出版时间 2019（3）
机构 NORWEGIAN UN.（4）
作者 WEMAN H（8）

Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure

ACS APPLIED MATERIALS INTERFACES

MUKHERJEE A, YUN H, SHIN DH, NAM J, MUNSHI AM, DHEERAJ DL, FIMLAND BO, WEMAN H, KIM KS, LEE SW, KIM DC

GaN/AIGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode

NANO LETTERS

HOIAAS IM, LIUDI MULYO A, VULLUM PE, KIM DC, AHTAPODOV L, FIMLAND BO, KISHINO K, WEMAN H

Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer

NANOTECHNOLOGY

LIUDI MULYO A, RAJPALKE MK, KUROE H, VULLUM PE, WEMAN H, FIMLAND BO, KISHINO K

Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si

MATERIALS

REN F, YIN Y, WANG YY, LIU ZQ, LIANG M, OU HY, AO JP, WEI TB, YAN JC, YUAN GD, YI XY, WANG JX, LI JM, DASA D, WEMAN H

Advances in semiconductor nanowire growth on graphene

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

MUNSHI AM, WEMAN H

Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth

NANO LETTERS

MUNSHI AM, DHEERAJ DL, FAUSKE VT, KIM DC, VAN HELVOORT ATJ, FIMLAND BO, WEMAN H

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer

NANO LETTERS

HEILMANN M, MUNSHI AM, SARAU G, GOBELT M, TESSAREK C, FAUSKE VT, VAN HELVOORT ATJ, YANG JF, LATZEL M, HOFFMANN B, CONIBEER G, WEMAN H, CHRISTIANSEN S

Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes

ACS APPLIED NANO MATERIALS

MULYO AL, MUKHERJEE A, HOIAAS IM, AHTAPODOV L, NILSEN TA, TOFTEVAAG HH, VULLUM PE, KISHINO K, WEMAN H, FIMLAND BO