国家/地区 Japan（4） Norway（2）
关键词 GRAPHENE（4） GAA（2） MOLECULAR BEAM EPIT.（2）
NANOWIRE（2）
出版物 NANO LETTERS（2） NANOTECHNOLOGY（2）
出版时间 2019（4）
机构 NORWEGIAN UNIV SCI TECHNOL NTNU（6）
作者 WEMAN H（6）

The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene

SCIENTIFIC REPORTS

LIUDI MULYO A, RAJPALKE MK, VULLUM PE, WEMAN H, KISHINO K, FIMLAND BO

Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure

ACS APPLIED MATERIALS INTERFACES

MUKHERJEE A, YUN H, SHIN DH, NAM J, MUNSHI AM, DHEERAJ DL, FIMLAND BO, WEMAN H, KIM KS, LEE SW, KIM DC

GaN/AIGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode

NANO LETTERS

HOIAAS IM, LIUDI MULYO A, VULLUM PE, KIM DC, AHTAPODOV L, FIMLAND BO, KISHINO K, WEMAN H

Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer (vol 30, 015604, 2018)

NANOTECHNOLOGY

LIUDI MULYO A, RAJPALKE MK, KUROE H, VULLUM PE, WEMAN H, FIMLAND BO, KISHINO K

Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer

NANOTECHNOLOGY

LIUDI MULYO A, RAJPALKE MK, KUROE H, VULLUM PE, WEMAN H, FIMLAND BO, KISHINO K

Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth

NANO LETTERS

MUNSHI AM, DHEERAJ DL, FAUSKE VT, KIM DC, VAN HELVOORT ATJ, FIMLAND BO, WEMAN H