国家/地区 Germany（3）
关键词 SCANNING TUNNELING POTENTIOMETRY（3）
出版物
出版时间
机构
作者 WENDEROTH M（3）

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

ACS APPLIED MATERIALS INTERFACES

PAKDEHI DM, APROJANZ J, SINTERHAUF A, PIERZ K, KRUSKOPF M, WILLKE P, BARINGHAUS J, STOCKMANN JP, TRAEGER GA, HOHLS F, TEGENKAMP C, WENDEROTH M, AHLERS FJ, SCHUMACHER HW

Electronic Transport Properties of 1D-Defects in Graphene and Other 2D-Systems

ANNALEN DER PHYSIK

WILLKE P, SCHNEIDER MA, WENDEROTH M

Unraveling the origin of local variations in the step resistance of epitaxial graphene on SiC: a quantitative scanning tunneling potentiometry study

CARBON

SINTERHAUF A, TRAEGER GA, MOMENI D, PIERZ K, SCHUMACHER HW, WENDEROTH M