国家/地区 Japan（3）
关键词
出版物
出版时间
机构 NATL INST MAT SCI（3）
作者 YOKOYAMA N（3）

Electrostatically Reversible Polarity of Dual-Gated Graphene Transistors

IEEE TRANSACTIONS ON NANOTECHNOLOGY

NAKAHARAI S, IIJIMA T, OGAWA S, LI SL, TSUKAGOSHI K, SATO S, YOKOYAMA N

Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition

SCIENTIFIC REPORTS

SONG HS, LI SL, MIYAZAKI H, SATO S, HAYASHI K, YAMADA A, YOKOYAMA N, TSUKAGOSHI K

Wafer-scale fabrication of transistors using CVD-grown graphene and its application to inverter circuit

JAPANESE JOURNAL OF APPLIED PHYSICS

NAKAHARAI S, IIJIMA T, OGAWA S, YAGI K, HARADA N, HAYASHI K, KONDO D, TAKAHASHI M, LI SL, TSUKAGOSHI K, SATO S, YOKOYAMA N